| http://www.w3.org/ns/prov#value | - With the aid of a molecular beam epitaxy (MBE) system, the semiconductor layer sequence 2-8 is now grown on the silicon substrate 1 at a low temperature, e.g. 900??? K., and in an ultrahigh vacuum of ???1???10-9 mbar, to provide the modulation doped field effect transistor according to this invention.
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