About: http://webisa.webdatacommons.org/89667890

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	U.S. Pat. No. 5,176,790 is related to the etching of mainly silicon oxide, silicon nitride or oxynitride layers in order to create a via hole extending through such a layer to an underlying electrically conductive layer.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com