| http://www.w3.org/ns/prov#value | - In a preferred embodiment, one of the conductors, the top electrode, is formed of heavily doped polysilicon of either n+ (or p+) or is a sandwich of said polysilicon and a metal above it and the other conductor, the lower electrode, is formed of heavily doped equal polarity n+ (or p+) diffusion region in a substrate or a well of opposite polarity p (or n).
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