| http://www.w3.org/ns/prov#value | - e for argon gas as carrier gas of 10 to 500 SCCM, and a flow rate for hydrogen gas of 0.01 to 3.0 SLM. The typical conditions for the high frequency power supply for causing plasma chemical reaction include a frequency of 50 kHZ to 13.56 MHZ and a power of 30 to 500 W. The film-forming conditions are not limited to the above, and other conditions may also provide the effect of this invention.
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