PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • In an embodiment of the present invention, the sacrificial gate dielectric 522 is an oxide, such as silicon dioxide formed to a thickness between 10-30 ???.
http://www.w3.org/ns/prov#wasQuotedFrom
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