About: http://webisa.webdatacommons.org/94148758

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The nitride semiconductor device according to claim 8, wherein said p-type contact layer is composed of two layers and said two layers are an Al.sub.gGa.sub.1-gN, (0<g<0.05) layer formed adjacent to said p-electrode and an
http://www.w3.org/ns/prov#wasQuotedFrom	patents.com