| http://www.w3.org/ns/prov#value | - The gate electrode 110 may be formed by sputtering or various types of CVD such as plasma CVD. In addition, the gate electrode 110 can be formed by using an element selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb), and the like; or an alloy material or a compound material mainly containing these elements.
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