| http://www.w3.org/ns/prov#value | - The paraelectric capacitor may be formed of a paraelectric insulating film e.g. SiO2, SiN, SiON, or a stacked film as for a known DRAM. Alternatively, the paraelectric capacitor may be in the form of a pn junction between the semiconductor substrate and the source/drain electrode of the MOSFET 432 connected to the common electrode node 426 (N) and formed in the semiconductor substrate.
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