| http://www.w3.org/ns/prov#value | - Both lower (LLD) and upper (ULD) layers shown in FIG. 2a may be formed from materials including but not limited to silicon oxide materials, silicon nitride materials, and silicon oxynitrides materials formed within integrated circuits through methods including but not limited do CVD, PECVD, PVD sputtering methods, and others known as PEOX, PETEOS, or low-k materials, FSG, HSQ Flare and PAE2.
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