| http://www.w3.org/ns/prov#value | - osphoric acid. d) In the embodiment using a silicon nitride or carbon doped nitride spacer, a buffered Hydrofluoric Acid (HF) solution, alternately used with surfactants such as ethylene glycol, can be used to remove the sacrificial ILD0 layer. e) Other isotropic or anisotropic etch processes may also be used.
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