PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • The present invention relates to a semiconductor device manufacturing method, in particular to a method of manufacturing a semiconductor device capable of reducing leak current in a device isolation region.
http://www.w3.org/ns/prov#wasQuotedFrom
  • google.fr