| http://www.w3.org/ns/prov#value | - Next, a crystalline semiconductor film is etched to form desired island-shaped crystalline semiconductor layers 1102 a to 1102 d as shown in FIG. 9C. Then, a gate insulating film 1103 is formed in approximately 115 nm thick using an insulating film including silicon by the low-pressure CVD method, the plasma CVD method, the sputtering method, or the like.
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