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  • A semiconductor material for forming an active layer having a channel formation region in each of the thin film transistors 104 a, 104 b, 104 c, 104 d, and 104 e can be selected from materials including silicon, germanium, or both of silicon and germanium, and in addition, an optimal structure can be selected from polycrystalline, monocrystalline, microcrystalline, and amorphous structures.
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