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An Entity of Type : prov:Entity, within Data Space : wifo5-40.informatik.uni-mannheim.de:8890 associated with source dataset(s)

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  • Accordingly, one embodiment of processing steps 119a and 119b contemplates a first implant 119a in which n-type impurities such as phosphorus or arsenic are introduced, preferably through an ion implantation, into conductive gate layer 118 over first region 104 of semiconductor substrate 102.
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