iconductor device with features of <0.25 microns; voidless interconnection pattern by filling the gaps with hydrogenpolysilsesquioxane and heat treating in an inert gas to remove waterUS6110819May 19, 1999Aug 29, 2000International Business Machines CorporationForming patterned interconnect layer including a first metal consisting of copper, copper alloys, aluminum, and aluminum alloys over first a