| http://www.w3.org/ns/prov#value | - FIG. 1 of the accompanying drawings is a cross-sectional diagram showing a sectional structure of such a p-Si TFT; on the left side is an n-channel TFT and on the right side is a p-channel TFT. On a substrate 10, a gate electrode 11 of metal such as chromium is formed and a gate insulation film 12 of, for example, silicon nitride (SiNX) and/or silicon oxide (SiO2) is formed so as to cover the gate
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