| http://www.w3.org/ns/prov#value | - 01Micron Technology, Inc.Memory using insulator trapsUS6246613Oct 4, 1999Jun 12, 2001Btg International Inc.Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cellUS6282145Jan 14, 1999Aug 28, 2001Silicon Storage Technology, Inc.Array architecture and operating methods for digital multilevel nonvolatile memory int
|
