| http://www.w3.org/ns/prov#value | - The non-volatile memory device of claim 1 wherein the number of erase pulses used in the second stage is determined by N2=(A*N1)+B, wherein N2 is the maximum number of erase pulses used in the second stage, N1 is the number of erase pulses used in the first stage, A is a predetermined fraction and B is a minimum number of erase pulses to use in the second stage.
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