About: http://webisa.webdatacommons.org/9373323

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	An object of the present invention is a method of manufacturing a semiconductor device comprising a gate electrode with substantially parallel side surfaces while preventing impurity penetration through the gate dielectric layer.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com