| http://www.w3.org/ns/prov#value | - Formation of the insulating films 35 is achieved in the following manner: a silicon oxide film having a thickness of 25 nm is deposited above the entire substrate 1 by, e.g., the CVD method, and is subjected to anisotropic etching such as RIE. In the above case, the bottom surfaces of the capacitor grooves 31 a are not covered by the insulating films 35. [0093] The exposed bottom surfaces of the c
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