| http://www.w3.org/ns/prov#value | - ound having a Si???Si bond, which enables gas phase deposition at a temperature lower than that of the conventional organic Si compound and produces a film having higher strength. [0016] That is, a method of the present invention is a method of forming a Si-containing thin film, which comprises forming a film using an organic Si-containing compound having a Si???Si bond represented by the followin
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