About: http://webisa.webdatacommons.org/204431560

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The first aspect of the present invention is a method of manufacturing a semiconductor device using a P-type gate electrode that includes heat treatment in an atmosphere containing water vapor, following gate insulation layer formation.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com