PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • The present invention is a method of successfully forming ohmic contacts to p-type wide bandgap semiconductor materials using high work function metals, as well as the resulting ohmic contact structures.
http://www.w3.org/ns/prov#wasQuotedFrom
  • google.es