| http://www.w3.org/ns/prov#value | - In one embodiment, the present invention is a method for forming shallow-trench isolation structures during semiconductor processing, comprising the sequence of steps of (a) forming shallow trenches in a substrate; (b) applying a silicon oxide layer onto the substrate; (c) applying a reverse-tone mask over the silicon oxide layer, wherein the reverse-tone mask has openings that expose the silicon
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