| http://www.w3.org/ns/prov#value | - Thus, titanium silicide is a material that can advantageously be used for the metal layer to be formed under the tungsten layer. [0014] Additionally, a titanium silicide film formed on the interface between the semiconductor regions (source/drain regions) of the MISFET of the peripheral circuit and the first wiring layer operates as effective means for reducing the contact resistance of the wires
|
