| http://www.w3.org/ns/prov#value | - ate, forming a well region in the epitaxial layer, and forming a source region, drain region, and channel region of the lateral power semiconductor device in the well, the source region and drain region having a first conductivity type, the channelregion and well region having a second conductivity type.In another embodiment, the present invention is a method of manufacturing a lateral power semic
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