About: http://webisa.webdatacommons.org/417671232

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	One aspect of the present invention is a method of depositing a gapfill copper layer onto a barrier layer for semiconductor device metallization.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com