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isa:167292006
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Here, although the description has been made on the example in which the insulating film (SiNxByOz) containing boron of 0.1 to 50 atoms % or 1 to 50 atoms %, preferably 0.1 to 10 atoms % and oxygen of 1 to 30 atoms % is used as one layer of the gate insulating film of the bottom gate type TFT, the invention is not particularly limited as long as a film is an insulating film.
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isap:290214284
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isa:167292006