About: isa:224103544   Sponge Permalink

An Entity of Type : prov:Entity, within Data Space : webisa.webdatacommons.org associated with source dataset(s)

AttributesValues
rdf:type
prov:value
  • BACKGROUND OF THE INVENTION [0001] The present invention relates in general to field effect transistors, and in particular trench transistors and methods of their manufacture. [0002]FIG. 1 is a simplified cross section of a portion of a conventional metal-oxide-semiconductor field-effect transistor (???MOSFET???) trench transistor.
prov:wasQuotedFrom
is prov:wasDerivedFrom of
Alternative Linked Data Views: ODE     Raw Data in: CXML | CSV | RDF ( N-Triples N3/Turtle JSON XML ) | OData ( Atom JSON ) | Microdata ( JSON HTML) | JSON-LD    About   
This material is Open Knowledge   W3C Semantic Web Technology [RDF Data] Valid XHTML + RDFa
OpenLink Virtuoso version 07.20.3217, on Linux (x86_64-pc-linux-gnu), Standard Edition
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2012 OpenLink Software