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An Entity of Type : prov:Entity, within Data Space : webisa.webdatacommons.org associated with source dataset(s)

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  • A method of fabricating a DRAM device, comprising:forming a transistor including a gate, a source/drain region and a word line on a silicon substrate; covering the transistor with an oxide layer, forming a contact opening in the oxide layer to expose a surface of the source/drain region; forming a conductive layer in the contact opening and covering the oxide layer; patterning the conductive layer
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