PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • More particularly, the present invention relates to an air gap structure and formation method for reducingundesired capacitive coupling between interconnects and/or other elements in an integrated circuit device.BACKGROUND OF THE INVENTIONAs integrated circuit transistor densities increase, and feature sizes shrink, capacitive coupling between adjacent interconnects, metal lines or other elements
http://www.w3.org/ns/prov#wasQuotedFrom
  • patentgenius.com