| http://www.w3.org/ns/prov#value | - The present invention relates to the structure of an insulated gate semiconductor device formed using a crystalline semiconductor substrate, for example, a monocrystal silicon substrate or an SOI substrate (SIMOX or the like), and more particularly to the structure of an insulated gate field effect transistor (hereinafter referred to simply as ???IG-FET???) and a method of manufacturing the same.
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