PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device having an insulated gate bipolar transistor and a free wheel diode and to a manufacturing method thereof.
http://www.w3.org/ns/prov#wasQuotedFrom
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