| http://www.w3.org/ns/prov#value | - The above and other objects and advantages, which will be apparent to one of skill in the art, are achieved in the present invention which is directed to, in a first aspect, a method and system of forming a semiconductor device, such as a FET, MOSFET, and CMOS, whereby a gate electrode is provided over a substrate and subsequently a dimension of the gate electrode is determined.
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