| http://www.w3.org/ns/prov#value | - First, the field oxide film 2 is formed in the surface region of the P type silicon substrate 1 using the known LOCOS method, as shown in FIG. 5A. Then, the P+ diffusion layer 3 is formed in the surface region of the substrate 1 using ion implantation to form the source and drain of each MOSFET. Next, an insulating material such as silicon dioxide is deposited on the entire surface of the substrat
|
