| http://www.w3.org/ns/prov#value | - Initially, an organic polymer layer 200 to 800 nm thick as a lower resist layer is formed on a substrate such as a silicon wafer, which organic polymer can be dry-etched by O2 reactive ion etching and includes novolak resins, or resists for g-line or i-line; next, the invented positive resist composition is applied on the organic polymer layer by spin coating to thereby yield an upper resist layer
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