| http://www.w3.org/ns/prov#value | - A non-volatile semiconductor memory comprising:a plurality of memory cells, each memory cell having a floating gate, wherein a threshold level of each of said memory cells depends on a value of electric charge in said floating gate of each memory cell, wherein said threshold level of each memory cell is placed in one of three areas including an erase area, a first storing area, and a second storin
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