| http://www.w3.org/ns/prov#value | - In another embodiment, barrier layer 22 may be a material such as aluminum nitride (AlN), silicon nitride (Si3N4), tantalum oxide (Ta2O5), yttrium oxide (Y2O3), magnesium oxide (MgO), zirconium oxide (ZrO2), lithium fluoride (LiF), aluminum fluoride (AlF3), calcium fluoride (CaF2), or any other suitable material that has a different etch characteristic than absorber layer 18 and filter layer 20 su
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