| http://www.w3.org/ns/prov#value | - The present invention is based on the discovery that by using silicon carbide of a selected polytype and growing Ga*N on that substrate in selected orientations, light emitting devices, e.g. a green-blue to ultraviolet emitting laser or a green-blue to ultraviolet emitting diode, of surprisingly high quantum efficiency and luminous efficiency may be fabricated.
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