| http://www.w3.org/ns/prov#value | - The method of manufacturing the semiconductor device according to claim 5, wherein the step of forming the third insulating layer includes:a step of removing portions of the second insulating layer and the first film other than portions thereof which lie under the plurality of nanocrystals, using the plurality of nanocrystals as a mask, thereby forming the at least one double-deck semiconductor na
|
