| http://www.w3.org/ns/prov#value | - The method of manufacturing a Group III nitride substrate according to claim 1, comprising: (A) preparing a Group III nitride semiconductor layer that is expressed by a composition formula of AluGavIn1-u-vN (where 0???u???1, 0???v???1, and u+v???1); (B) oxidizing portions of a surface of the Group III nitride semiconductor layer to form oxidized regions; and (C) in an atmosphere including nitrogen
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