| http://www.w3.org/ns/prov#value | - Therefore, the stress applied from the mother substrate 11 to the n-type underlying layer 31 when the n-type contact layer 32 is grown on the n-type underlying layer 31 and further the semiconductor layers including the quantum well active layer 35 are grown and then the epitaxial substrate is cooled back to room temperature, which is caused by the difference in the thermal expansion coefficient b
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