| http://www.w3.org/ns/prov#value | - The result is a barrier level between the semiconductor material and the memory layer which is reduced from 3.1 eV, when exclusively SiO2 is used, to approximately 2 eV. A corresponding continuous variation of the composition of a lower boundary layer based on SiO2 is also possible with other chemical elements instead of hafnium, preferably with metals, as additives, for example with titanium, zir
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