| http://www.w3.org/ns/prov#value | - The semiconductor memory device according to claim 1, wherein said trench capacitors are each shaped substantially in a square having one side equal to 2F, where F is a minimum processing dimension, the sides of said squares are oriented in two orthogonal directions of said word line and said bit line, and said trench capacitors are arranged at a regular pitch of 2F in the bit line direction, and
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