| http://www.w3.org/ns/prov#value | - When the hemispherical grains are being formed, the sidewall of the annular ring is the closest portion of the bottom electrode to the adjacent bottom electrode Because the sidewall of the annular ring is covered with the first amorphous silicon layer having a higher impurity concentration covering, the grain size of hemispherical grains at the sidewall of the annular ring will be smaller, thereby
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