| http://www.w3.org/ns/prov#value | - In this variation of the present invention, the gate stack comprises a multiple layer stack selected from a group of multiple layer stacks consisting of: O/N/O/M, O/N/H/M, O/H/H/M, O/H/O/M, H/H/H/M, or H/N/H/M, where O is an oxide material, N is S
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