| http://www.w3.org/ns/prov#value | - As regards the thickness of such a thin oxide layer, the Respondent has argued at the oral proceedings that even at room temperature for example silicon has an oxide layer of about 100A, a thickness which clearly falls within the range of 0.001 m or more as required in accordance with the teaching of the patent-in-suit (see col. 3, lines 24 to 26).
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