| http://www.w3.org/ns/prov#value | - The circuit represented in FIGS. 4a and 5 (or 4d and 6) make it possible to control the threshold voltage of MOS transistors with the two n and p types of conductivity, as long as the bias voltage remains within the possible limits defined by the conduction voltage, on the one hand, and the breakdown voltage of the well-source junction, on the other hand, of the transistors 24 and 81.
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