| http://www.w3.org/ns/prov#value | - If electrically insulating layer 1020 is very thin (e.g. less than 1.5 nm) charge traps can be formed by deposition of an additional continuous or discontinuous layer of charge-trapping material such as SiOxNy, Si3N4, Si, Ge or metal. [0102] Two representative examples of techniques to form charge traps near the silicon substrate interface are illustrated in FIGS. 14 and 15.
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