| http://www.w3.org/ns/prov#value | - As shown in FIGS. 2A through 2C, the anode active material layer according to the present invention is a preferably structure in which the Si-M layer and the Ag layer are alternately stacked, more preferably a structure in which an Ag layer is interposed between Si-M layers, in view of the effect of suppressing an increase in the volume of the anode active material layer.
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